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| Preliminary data IPU14N03L OptiMOSa Power-Transistor Buck converter series Feature N-Channel Logic Level Low on-resistance RDS(on) Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175C operating temperature dv/dt rated Ideal for fast switching buck converter Ideal for fast switching buck converter Package P-TO251 Ordering Code Q67042-S4115 Marking 14N03L Product Summary VDS RDS(on) ID 30 14.4 30 P-TO251 V m A Type IPU14N03L Maximum Ratings,at Tj = 25 C, unless otherwise specified Parameter Continuous drain current TC=25C TC=100C Symbol ID Value 30 30 Unit A Pulsed drain current TC=25C ID puls EAS dv/dt VGS Ptot Tj , Tstg 120 20 6 20 60 -55... +175 55/175/56 mJ kV/s V W C Avalanche energy, single pulse ID =20A, VDD =25V, RGS =25 Reverse diode dv/dt IS =30A, VDS =-V, di/dt=200A/s, Tjmax =175C Gate source voltage Power dissipation TC=25C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2002-03-04 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) IPU14N03L Symbol min. RthJC RthJA RthJA - Values typ. max. 2.5 100 75 50 Unit K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0V, ID =1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 30 1.2 Values typ. 1.6 max. 2 Unit V Gate threshold voltage, VGS = VDS ID = 30 A Zero gate voltage drain current VDS =30V, VGS =0V, Tj=25C VDS =30V, VGS =0V, Tj=125C A 0.01 10 1 16.7 11.5 1 100 100 20.9 14.4 nA m Gate-source leakage current VGS =20V, VDS=0V Drain-source on-state resistance VGS =4.5V, ID=20A Drain-source on-state resistance VGS =10V, ID =20A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2002-03-04 Preliminary data Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics ID =20A IPU14N03L Symbol Conditions min. Values typ. 48 770 280 74 1.5 5.9 30.4 26.6 14.4 max. 1025 370 111 8.9 45.6 39.9 21.6 - Unit Input capacitance Output capacitance Reverse transfer capacitance Gate resistance Turn-on delay time Rise time Turn-off delay time Fall time Ciss Coss Crss RG td(on) tr td(off) tf VGS =0V, VDS =25V, f=1MHz VDD =15V, VGS=10V, ID =15A, RG =8.5 - Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Output charge Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS =0V, IF =30A VR =-V, IF=lS, diF /dt=100A/s Qgs Qgd Qg Qoss VDD =15V, ID =15A - 2.5 6.2 10.6 10.24 3.4 3.1 9.3 13.3 12.8 - VDD =15V, ID =15A, VGS =0 to 5V VDS =15V, ID =15A, VGS =0V V(plateau) VDD =15V, ID=15A IS ISM TC=25C - 0.9 23 15 30 120 1.2 29 19 Page 3 2002-03-04 Transconductance gfs VDS 2*ID *RDS(on)max , 24 - S pF ns nC V A V ns nC Preliminary data 1 Power dissipation Ptot = f (TC ) 65 IPU14N03L IPU14N03L 2 Drain current ID = f (TC ) parameter: VGS 10 V 32 IPU14N03L W A 55 50 45 24 Ptot ID 40 35 20 16 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160 C 190 0 0 20 40 60 80 100 120 140 160 C 190 8 12 4 TC 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25 C 10 3 IPU14N03L 4 Transient thermal impedance ZthJC = f (tp ) parameter : D = tp /T 10 1 IPU14N03L K/W A 10 0 tp = 5.7s 10 2 ID DS ( on ) = V DS 10 s Z thJC /I D R 10 -1 100 s 10 1 1 ms 10 -2 single pulse 10 ms DC 10 0 10 -1 10 0 10 1 V 10 2 10 -3 -7 10 10 -6 VDS Page 4 TC D = 0.50 0.20 0.10 0.05 0.02 0.01 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 2002-03-04 Preliminary data 5 Typ. output characteristic ID = f (VDS ); Tj=25C parameter: tp = 80 s IPU14N03L IPU14N03L 6 Typ. drain-source on resistance RDS(on) = f (ID ) parameter: VGS 50 IPU14N03L 75 A Ptot = 60W k VGS [V] a 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.5 10.0 60 55 j b c d e RDS(on) ID 50 45 40 35 30 25 20 15 10 5 0 0 1 2 3 4 c a b e d g f i f g h hi j k V 6 VDS 7 Typ. transfer characteristics ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 80 s 100 8 Typ. forward transconductance gfs = f(ID ); Tj=25C parameter: gfs 70 A 80 70 g fs ID 60 50 40 30 20 10 0 0 1 2 3 4 5.5 V VGS Page 5 40 35 30 25 20 15 10 5 0 0 VGS [V] = f 3.6 g 3.8 f g h i j k h i 4.0 4.2 j 4.5 k 10.0 10 20 30 40 50 A 65 ID S 60 55 50 45 40 35 30 25 20 15 10 5 0 0 20 40 60 80 A ID 120 2002-03-04 Preliminary data 9 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = 20 A, VGS = 10 V 34 IPU14N03L IPU14N03L 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS 2.5 RDS(on) 24 V GS(th) 11 Typ. capacitances C = f (VDS) parameter: VGS =0V, f=1 MHz 10 4 pF 10 3 C Coss 10 2 Crss IF 10 1 0 28 V max 20 16 98% 1.5 typ 1 12 typ min 8 0.5 4 0 -60 -20 20 60 100 140 C 200 0 -60 -20 20 60 100 C Tj 180 Tj 12 Forward character. of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 s 10 3 IPU14N03L A Ciss 10 2 10 1 Tj = 25 C typ Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) 10 0 0 5 10 15 20 V 30 0.4 0.8 1.2 1.6 2 2.4 V 3 VDS VSD Page 6 2002-03-04 Preliminary data 13 Typ. avalanche energy EAS = f (Tj ) 20 IPU14N03L 14 Typ. gate charge VGS = f (QGate ) parameter: ID = 15 A pulsed 16 V IPU14N03L mJ 16 E AS VGS 14 12 10 8 6 4 2 0 25 2 45 65 85 105 125 145 C 185 Tj 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) parameter: ID=10 mA 36 IPU14N03L V V (BR)DSS 34 33 32 31 30 29 28 27 -60 -20 20 60 100 140 C Tj Page 7 200 par.: ID = 20 A, VDD = 25 V, RGS = 25 12 10 0.2 VDS max 8 0.5 VDS max 0.8 VDS max 6 4 0 0 4 8 12 16 20 24 nC 30 QGate 2002-03-04 Preliminary data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. IPU14N03L Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2002-03-04 |
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